2010-04-09 BFP410 1 1 2 3 4 npn silicon rf transistor ? low current device suitable e.g. for handhelds ? for high frequency oscillators e.g. dro for lnb ? for ism band applications like automatic meter reading, sensors etc. ? transit frequency f t = 25 ghz ? pb-free (rohs compliant) package ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP410 aks 1=b 2=e 3=c 4=e - - sot343 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage t a = 25 c t a = -55 c v ceo 4.5 4.1 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.5 collector current i c 40 ma base current i b 6 total power dissipation 1) t s 100 c p tot 150 mw junction temperature t j 150 c ambient temperature t a -55 ... 150 storage temperature t st g -55 ... 150 1 t s is measured on the emitter lead at the soldering point to the pcb thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 335 k/w
2010-04-09 BFP410 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 2 v, v be = 0 v ce = 5 v, v be = 0 , t a = 85 c (verified by random sampling) i ces - - 1 2 30 50 na collector-base cutoff current v cb = 2 v, i e = 0 i cbo - 1 30 emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - 0.001 0.6 a dc current gain i c = 13 ma, v ce = 2 v, pulse measured h fe 60 95 130 - 1 for calculation of r thja please refer to application note thermal resistance
2010-04-09 BFP410 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 20 ma, v ce = 2 v, f = 2 ghz f t 18 25 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.09 0.17 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.35 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.45 - noise figure i c = 2 ma, v ce = 2 v, f = 2 ghz, z s = z sopt f - 1.2 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 2 ghz g ms - 21.5 - db insertion power gain v ce = 2 v, i c = 20 ma, f = 2 ghz, z s = z l = 50 ? | s 21 | 2 - 18.5 - third order intercept point at output 2) v ce = 2 v, i c = 20 ma, f = 2 ghz, z s = z l = 50 ? ip 3 - 23.5 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 2 ghz p -1db - 10.5 - 1 g ms = | s 21 / s 12 | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2010-04-09 BFP410 4 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 160 t s 0 20 40 60 80 100 120 140 mw 180 p tot collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 0.5 1 1.5 2 2.5 3 v 4 v cb 0 0.05 0.1 0.15 0.2 pf 0.3 c cb transition frequency f t = ? ( i c ) f = 2 ghz v ce = parameter in v 0 4 8 12 16 20 24 ma 32 i c 2 4 6 8 10 12 14 16 18 20 22 ghz 26 f t 3 to 4v 2v 1v 0.5v power gain g ma , g ms , | s 21 | 2 = ? ( f ) v ce = 2 v, i c = 13 ma 0 2 4 6 ghz 10 f 0 5 10 15 20 25 30 35 db 45 g gms gma |s21|2
2010-04-09 BFP410 5 power gain g ma , g ms = ? ( i c ) v ce = 2v f = parameter in ghz 0 4 8 12 16 20 24 28 ma 36 i c 0 4 8 12 16 20 24 28 32 db 40 g 0.15ghz 0.45ghz 0.9ghz 1.5ghz 1.9ghz 2.4ghz 3.5ghz 5.5ghz 10ghz power gain g ma , g ms = ? ( v ce ) i c = 13 ma f = parameter in ghz 0 1 2 3 4 v 6 v ce 0 4 8 12 16 20 24 28 32 db 40 g 0.15ghz 0.45ghz 0.9ghz 1.5ghz 1.9ghz 2.4ghz 3.5ghz 5.5ghz 10ghz noise figure f = ? ( i c ) v ce = 2 v, z s = z sopt 0 4 8 12 16 20 24 ma 30 i c 0 0.5 1 1.5 2 2.5 3 3.5 db 4.5 f min f= 10.0 ghz f= 5.5 ghz f= 2.4 ghz f= 1.8 ghz f= 0.9 ghz f= 0.45 ghz noise figure f = ? ( i c ) v ce = 2 v, f = 2 ghz 0 4 8 12 16 ma 24 i c 0 0.5 1 1.5 2 2.5 3 db 4 f zs=50ohm zs=zsopt
2010-04-09 BFP410 6 collector current i c = ? ( v be ) v ce =2 v 0.2 0.4 0.6 0.8 v 1.2 v be -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 ma i c collector current i c = ? ( v ce ) parameter i b 0 1 2 3 v 5 v ce 0 5 10 15 ma 25 i c 20a 90a 160a base current reverse i b = ? ( v eb ) 0 0.5 1 v 2 v eb -5 10 -4 10 -3 10 -2 10 -1 10 0 10 a i b dc current gain h fe = ? ( i c ) v ce =2 v 10 -1 10 0 10 1 10 2 ma i c 0 10 1 10 2 10 3 10 h fe
2010-04-09 BFP410 7 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2010-04-09 BFP410 8 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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